THN6201 - SiGe NPN Transistor

AUK

Datasheet Details

Base Emitter Collector Available Package Unit : mm Product Package Dimension THN6201S SOT-23 2

s o Low Noise Figure NF = 1.1 dB at f = 1 GHz, VCE = 3 V, IC = 5 mA NF = 1.5 dB at f = 2 GHz, VCE = 3 V, IC = 5 mA o High Power Gain MAG = 18.5 dB at f = 1 GHz, VCE = 3 V, IC = 15 mA MAG = 13 dB at f = 1 GHz, VCE = 3 V, IC = 15 mA o High Transition Frequency fT = 12 GHz at VCE = 3 V, IC = 15 mA.
hFE Classification Marking AC1 hFE Value 125 to 300 AC2 80 to 160.
Absolute Maximum Ratings Symbol Parameter VCBO Collector to Base Breakdown Voltage VCEO Collector to Emitter.

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Published: Jan 30, 2017 |