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ASC30N1200MT3 1200V N-Channel MOSFET

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Description

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V X / Mob:15919711751 ASC30N1200MT3 1200V N-Channel MOSFET Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switc.

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Datasheet Specifications

Part number
ASC30N1200MT3
Manufacturer
AST
File Size
823.86 KB
Datasheet
ASC30N1200MT3-AST.pdf
Description
1200V N-Channel MOSFET

Features

* High Speed Switching with Low Capacitances
* High Blocking Voltage with Low RDS(on)
* Simple to drive with Standard Gate Drive
* 100% avalanche tested
* Maximum junction temperature of 150°C

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