AP6G06S - 60V N+P-Channel Enhancement Mode MOSFET

Datasheet Details

Part number	AP6G06S
Manufacturer	APM
File Size	1.13 MB
Description	60V N+P-Channel Enhancement Mode MOSFET
Datasheet	AP6G06S-APM.pdf

The AP6G06S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

VDS = 60V ID =6.5A RDS(ON) < 55mΩ @ VGS=10V（Type：40mΩ） VDS = -60V ID =-6.2A RDS(ON) < 90mΩ @ VGS=-10V（Type：70mΩ）.

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Published: Mar 4, 2025 |