AP6G04S - 40V N+P-Channel Enhancement Mode MOSFET

APM

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Datasheet Details

Part number	AP6G04S
Manufacturer	APM
File Size	2.12 MB
Description	40V N+P-Channel Enhancement Mode MOSFET
Datasheet	AP6G04S-APM.pdf

AP6G04S Product details

Description

AP6G04S 40V N+P-Channel Enhancement Mode MOSFET The AP6G04S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.This device is suitable for use as a Battery protection or in other Switching application.General

Features

VDS = 40V ID =6.3A RDS(ON) < 37mΩ @ VGS=10V （Type：30mΩ） Only VDS = -40V ID =-6.1A RDS(ON) < 75mΩ @ VGS=-10V （Type：62mΩ）.

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Published: Jan 22, 2025 |