AP50H02DF3 - 20V N+N-Channel Enhancement Mode MOSFET

APM

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Datasheet Details

Part number	AP50H02DF3
Manufacturer	APM
File Size	675.32 KB
Description	20V N+N-Channel Enhancement Mode MOSFET
Datasheet	AP50H02DF3-APM.pdf

AP50H02DF3 Product details

Description

AP50H02DF3 20V N+N-Channel Enhancement Mode MOSFET The AP50H02DF3 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.This device is suitable for use as a Battery protection or in other Switching application.General

Features

VDS = 20V ID =50A RDS(ON) < 8.5mΩ @ VGS=4.5V （Type：6.2mΩ）.

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Published: Mar 4, 2025 |