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AP4606B 30V N+P-Channel Enhancement Mode MOSFET

AP4606B Description

AP4606B 30V N+P-Channel Enhancement Mode MOSFET .
The AP4606B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

AP4606B Applications

* , should be limited by total power dissipation. 2 AP4606B REV1.1 AP4606B 30V N+P-Channel Enhancement Mode MOSFET P-Channel Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit V(BR)DSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0

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Datasheet Details

Part number
AP4606B
Manufacturer
APM
File Size
1.58 MB
Datasheet
AP4606B-APM.pdf
Description
30V N+P-Channel Enhancement Mode MOSFET

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30V N +P-Channel Enhancement Mode MOSFET APM
APM AP4606B-like datasheet