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AP40H03DF2 30V N+N-Channel Enhancement Mode MOSFET

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Description

AP40H03DF2 30V N+N-Channel Enhancement Mode MOSFET .
The AP40H03DF2 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

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Datasheet Specifications

Part number
AP40H03DF2
Manufacturer
APM
File Size
748.99 KB
Datasheet
AP40H03DF2-APM.pdf
Description
30V N+N-Channel Enhancement Mode MOSFET

Applications

* , should be limited by total power dissipation. Max.
* 2.5 10 18 1 5 ±100
* 43 112 1
* - Unit V V mΩ uA nA S Ω nC ns pF A A V nS nC 2 AP40H03DF2 REV1.0 Typical Char

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