AP25G03GD 30V N+P-Channel Enhancement Mode MOSFET

APM

Description

sales.Mr.wang13826508770 www.sztssd.com AP25G03GD 30V N+P-Channel Enhancement Mode MOSFET .
The AP25G03GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

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Datasheet Specifications

Part number: AP25G03GD
Manufacturer: APM
File Size: 1.86 MB
Datasheet: AP25G03GD-APM.pdf
Description: 30V N+P-Channel Enhancement Mode MOSFET

Features

* VDS = 30V ID =25A RDS(ON) < 22mΩ @ VGS=10V （Type：15mΩ） VDS = -30V ID =-24A Only RDS(ON)

Applications

* , should be limited by total power dissipation. For 2 AP20G03GD RVE1.0 sales. Mr. wang13826508770 www. sztssd. com AP25G03GD 30V N+P-Channel Enhancement Mode MOSFET Electrical Characteristics (TC=25℃unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source B

AP25G03GD Distributors

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AP25G03GD 30V N +P-Channel Enhancement Mode MOSFET APM

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