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AGMH12N10D - MOSFET

Product Overview

AGMSEMI

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AGMH12N10D MOSFET by AGMSEMI - Datasheet Preview — Datasheet preview – AGMH12N10D

Datasheet Details

Part number	AGMH12N10D
Manufacturer	AGMSEMI
File Size	1.44 MB
Description	MOSFET
Datasheet	AGMH12N10D Datasheet
Additional preview pages of the AGMH12N10D datasheet.

Product details

Description

The AGMH12N10D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

Features

s BVDSS RDSON ID 100V 9.6mΩ 65A.
Advance high cell density Trench technology.
Low RDS(ON) to minimize conductive loss.
Low Gate Charge for fast switching.
Low Thermal resistance TO-252 Pin Configuration D.
100% Avalanche test.
100% DVDS tested.

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Published: Dec 28, 2024 |