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AGMH12N10C - MOSFET

Product Overview

AGMSEMI

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AGMH12N10C MOSFET by AGMSEMI - Datasheet Preview — Datasheet preview – AGMH12N10C

Datasheet Details

Part number	AGMH12N10C
Manufacturer	AGMSEMI
File Size	1.33 MB
Description	MOSFET
Datasheet	AGMH12N10C Datasheet
Additional preview pages of the AGMH12N10C datasheet.

Product details

Description

The AGMH12N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

Features

s BVDSS RDSON ID 100V 9.6mΩ 55A.
Advance high cell density Trench technology.
Low RDS(ON) to minimize conductive loss.
Low Gate Charge for fast switching TO-220 Pin Configuration.
Low Thermal resistance.
100% Avalanche tested.
100% DVDS tested.

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Published: Dec 28, 2024 |