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AGM85P10A - MOSFET

Description

The AGM85P10A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

  • s.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance.
  • 100% Avalanche tested.
  • 100% DVDS tested.

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Datasheet Details

Part number AGM85P10A
Manufacturer AGMSEMI
File Size 0.98 MB
Description MOSFET
Datasheet download datasheet AGM85P10A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AGM85P10A ● General Description The AGM85P10A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ■ 100% Avalanche tested ■ 100% DVDS tested ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Product Summary BVDSS -100V RDSON 86mΩ PDFN5*6 Pin Configuration ID -19A Package Marking and Ordering Information Device Marking Device Device Package AGM85P10A AGM85P10A PDFN5*6 Reel Size 330mm Tape width 12mm Quantity 3000 Table 1.
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