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SSC8329GS1 - Dual P-Channel Enhancement Mode MOSFET

SSC8329GS1 Description

SSC8329GS1 Dual P-Channel Enhancement Mode MOSFET * .
This device is produced with high cell density, DMOS Top View D1 D1 D2 trench technology, which is especially used to minimize on-state resistance.

SSC8329GS1 Features

* VDS -20V VGS ±12V RDSon TYP 13mR@-4V5V 16mR@-2V5 ID -18A

SSC8329GS1 Applications

* Load Switch
* DCDC conversion
* NB battery
* Pin configuration

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Datasheet Details

Part number
SSC8329GS1
Manufacturer
AFSEMI
File Size
594.70 KB
Datasheet
SSC8329GS1-AFSEMI.pdf
Description
Dual P-Channel Enhancement Mode MOSFET

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Dual P-Channel Enhancement Mode MOSFET AFSEMI
AFSEMI SSC8329GS1-like datasheet