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SSC8205GSB - Dual N-Channel Enhancement Mode MOSFET

SSC8205GSB Description

SSC8205GSB Common Drain N-Channel Enhancement Mode MOSFET * .
Case: SOT23-6 Case Material: Molded Plastic.

SSC8205GSB Features

* VDS VGS RDSon TYP ID 20mR@4V5 20V ±12V 22mR@3V85 6A 24mR@2V5 Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance High Power and Current handling capability Fully Characterized Avalanche Voltage and Current

SSC8205GSB Applications

* Li-ion battery protection ;
* Load swich
* Pin configuration Top View PIN NUMBER 1 2 3 4 5 6 SOT23-6L NAME S1 D S2 G2 D G1 FUNCTION SOURCE1 DRAIN SOURCE2 GATE2 DRAIN GATE1
* Package Information ⑥ ⑤④ ①② ③ SSC-1V0 Units:mm SOT23-6L http://www. afsemi. com 1/5 Analog Future

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Datasheet Details

Part number
SSC8205GSB
Manufacturer
AFSEMI
File Size
308.14 KB
Datasheet
SSC8205GSB-AFSEMI.pdf
Description
Dual N-Channel Enhancement Mode MOSFET

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Dual N-Channel Enhancement Mode MOSFET AFSEMI
AFSEMI SSC8205GSB-like datasheet