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SSC8162GT3 - N-Channel Enhancement Mode MOSFET

SSC8162GT3 Description

SSC8162GT3 N-Channel Enhancement Mode MOSFET * .
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

SSC8162GT3 Features

* VDS 60V VGS ±20V RDSon TYP 9mR@10V 13mR@4V5 ID 60A

SSC8162GT3 Applications

* Applications
* Load Switch
* Portable Devices
* DCDC conversion Pin Configuration Top View
* Package Information SSC-V1.0 http://www. afsemi. com 1/5 Analog Future SSC8162GT3 Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Drain-Source Voltag

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Datasheet Details

Part number
SSC8162GT3
Manufacturer
AFSEMI
File Size
551.54 KB
Datasheet
SSC8162GT3-AFSEMI.pdf
Description
N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET AFSEMI
AFSEMI SSC8162GT3-like datasheet