Datasheet Details
- Part number
- SSC8120GN1
- Manufacturer
- AFSEMI
- File Size
- 192.76 KB
- Datasheet
- SSC8120GN1-AFSEMI.pdf
- Description
- N-Channel Enhancement Mode MOSFET
SSC8120GN1 Description
SSC8120GN1 N-Channel Enhancement Mode MOSFET * .
This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .
SSC8120GN1 Features
* VDS 20V
VGS ±12V
RDSon TYP 310mR@4V5 490mR@2V5 850mR@1V8
ID 0.7A
ESD 1.2K
SSC8120GN1 Applications
* especially for battery powered circuits, the tiny and thin outline saves PCB consumption.
* Applications
* Load Switch
* Portable Devices
* DCDC Conversion
* Pin configuration
bottom View
* Package Information
SSC-1V0
DFN1006
1/5
http://www. afsemi. com
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