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SSC8039GT3 - P-Channel Enhancement Mode MOSFET

SSC8039GT3 Description

SSC8039GT3 P-Channel Enhancement Mode MOSFET * .
Top View This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance.

SSC8039GT3 Features

* VDS -30V VGS ±20V RDSon TYP 15mR@-10V 20mR@-4V5 ID -11A

SSC8039GT3 Applications

* Load Switch
* DCDC conversion
* NB battery
* Pin configuration

📥 Download Datasheet

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Datasheet Details

Part number
SSC8039GT3
Manufacturer
AFSEMI
File Size
344.24 KB
Datasheet
SSC8039GT3-AFSEMI.pdf
Description
P-Channel Enhancement Mode MOSFET

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📌 All Tags

P-Channel Enhancement Mode MOSFET AFSEMI
AFSEMI SSC8039GT3-like datasheet