ACE4922 - Dual N-Channel Enhancement Mode MOSFET

ACE Technology

Datasheet Details

Part number	ACE4922
Manufacturer	ACE Technology
File Size	567.99 KB
Description	Dual N-Channel Enhancement Mode MOSFET
Datasheet	ACE4922-ACETechnology.pdf

The ACE4922 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

N-Channel 20V/0.95A, RDS(ON)=380mΩ@VGS=4.5V 20V/0.75A, RDS(ON)=450mΩ@VGS=2.5V 20V/0.65A, RDS(ON)=800mΩ@VGS=1.8V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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Published: Jul 10, 2016 |