ACE4922 Datasheet (ACE Technology) - Dual N-Channel Enhancement Mode MOSFET

ACE4922, Dual N-Channel Enhancement Mode MOSFET

The ACE4922 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

These devices are particularly

ACE4922 Features

* N-Channel 20V/0.95A, RDS(ON)=380mΩ@VGS=4.5V 20V/0.75A, RDS(ON)=450mΩ@VGS=2.5V 20V/0.65A, RDS(ON)=800mΩ@VGS=1.8V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability Application

* Power Management in Note book