ACE4908A Datasheet (ACE Technology) - Dual P-Channel Enhancement Mode MOSFET

ACE4908A, Dual P-Channel Enhancement Mode MOSFET

The ACE4908A is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

These devices are particularly

ACE4908A Features

* P-Channel -20V/1.0A,RDS (ON)= 520mΩ@VGS=-4.5V -20V/0.8A,RDS (ON)= 700mΩ@VGS=-2.5V -20V/0.7A,RDS (ON)= 950mΩ@VGS=-1.8V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Manag