ACE4908A - Dual P-Channel Enhancement Mode MOSFET

ACE Technology

Datasheet Details

Part number	ACE4908A
Manufacturer	ACE Technology
File Size	421.80 KB
Description	Dual P-Channel Enhancement Mode MOSFET
Datasheet	ACE4908A-ACETechnology.pdf

The ACE4908A is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

P-Channel -20V/1.0A,RDS (ON)= 520mΩ@VGS=-4.5V -20V/0.8A,RDS (ON)= 700mΩ@VGS=-2.5V -20V/0.7A,RDS (ON)= 950mΩ@VGS=-1.8V.
Super high density cell design for extremely low RDS (ON).
Exceptional on-resistance and maximum DC current capability.

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Published: Jul 10, 2016 |