ACE3413 - P-Channel Enhancement Mode MOSFET

ACE Technology

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Datasheet Details

Part number	ACE3413
Manufacturer	ACE Technology
File Size	193.46 KB
Description	P-Channel Enhancement Mode MOSFET
Datasheet	ACE3413_ACETechnology.pdf

ACE3413 Product details

Description

P-Channel Enhancement Mode MOSFET The ACE3413 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount pac

Features

-20V/-3.4A, RDS(ON)=95mΩ@VGS=-4.5V -20V/-2.4A, RDS(ON)=120mΩ@VGS=-2.5V -20V/-1.7A, RDS(ON)=145mΩ@VGS=-1.8V -20V/-1.0A, RDS(ON)=210mΩ@VGS=-1.25V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design.

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Published: Mar 13, 2010 |