ACE2305 Datasheet (ACE Technology) - P-Channel Enhancement Mode MOSFET

ACE2305, P-Channel Enhancement Mode MOSFET

P-Channel Enhancement Mode MOSFET The ACE2305 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited

ACE2305 Features

* -15V/-3.5A, RDS(ON)=70mΩ@VGS=-4.5V -15V/-3.0A, RDS(ON)=85mΩ@VGS=-2.5V -15V/-2.0A, RDS(ON)=105mΩ@VGS=-1.8V Super high density cell design for extremely low RDS(ON) Excep