ACE2302 - N-Channel Enhancement Mode MOSFET

ACE Technology

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Datasheet Details

Part number	ACE2302
Manufacturer	ACE Technology
File Size	224.73 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	ACE2302_ACETechnology.pdf

ACE2302 Product details

Description

N-Channel Enhancement Mode MOSFET The ACE2302 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount pac

Features

20V/3.6A, RDS(ON)=80mΩ@VGS=4.5V 20V/3.1A, RDS(ON)=95mΩ@VGS=2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability.

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Published: Mar 13, 2010 |