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QN3107M6N Datasheet, uPI Semiconductor

QN3107M6N mosfet equivalent, n-channel 30v fast switching mosfet.

QN3107M6N Avg. rating / M : 1.0 rating-14

datasheet Download (Size : 1.00MB)

QN3107M6N Datasheet
QN3107M6N Avg. rating / M : 1.0 rating-14

datasheet Download (Size : 1.00MB)

QN3107M6N Datasheet

Features and benefits

 Advanced high cell density Trench technology  Super Low Gate Charge  Green Device Available Product Summary VDS 30V RDS(ON) max (VGS=10V) 2.6mΩ ID (TC=25 °C) 118A.

Application

The QN3107M6N meets RoHS and Green Product requirements while supporting full function reliability. Features  Advanc.

Description

The QN3107M6N is a high performance trench N-channel MOSFET which utilizes extremely high cell density to provide low Rdson and gate charge characteristics. It is ideally suited to support synchronous buck converter applications. The QN3107M6N meet.

Image gallery

QN3107M6N Page 1 QN3107M6N Page 2 QN3107M6N Page 3

TAGS

QN3107M6N
N-Channel
30V
Fast
Switching
MOSFET
uPI Semiconductor

Manufacturer


uPI Semiconductor

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