Advanced high cell density Trench technology Super Low Gate Charge Green Device Available Product Summary BVDSS 30V RDSON (VGS=10V) 6.3mΩ ID (TC=25℃) 68A Application.

. The QN3103M6N meet the RoHS and Green Product requirement with full function reliability approved. Features Advanced h.

The QN3103M6N is the highest performance trench N-Channel MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QN3103M6N meet the RoHS and Green Product re.

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