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PE8813 Datasheet, semi one

PE8813 mosfet equivalent, n-channel enhancement mode power mosfet.

PE8813 Avg. rating / M : 1.0 rating-12

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PE8813 Datasheet

Features and benefits


* VDS = 20V,ID =10A RDS(ON) =9 mΩ@ VGS=4.5V RDS(ON) =11mΩ@ VGS=4.5V ESD Rating: 2000V HBM
* High power and current handing capability
* Lead free product is a.

Application

It is ESD protested. General Features
* VDS = 20V,ID =10A RDS(ON) =9 mΩ@ VGS=4.5V RDS(ON) =11mΩ@ VGS=4.5V ESD Ratin.

Description

The PE8813 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.It is ESD protested. General Features <.

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PE8813 Page 1 PE8813 Page 2 PE8813 Page 3

TAGS

PE8813
N-Channel
Enhancement
Mode
Power
MOSFET
PE8810
PE8804
PE8806
semi one

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