PE8806 mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =16V,I D =7A RDS(ON) < 15mΩ @ VGS=4.5V RDS(ON) < 17 mΩ @ VGS=3.8V RDS(ON) < 21mΩ @ VGS=2.5V
* High Power and current handing capability
* Lead free prod.
General Features
* VDS =16V,I D =7A RDS(ON) < 15mΩ @ VGS=4.5V RDS(ON) < 17 mΩ @ VGS=3.8V RDS(ON) < 21mΩ @ VGS=2.5V
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The PE8806 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
General Features
* VDS =16V,I D =7A.
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