PE60R900I ，PE60R900K
N-Channel Super Junction Power MOSFET Ⅱ
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●Small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant
VDS @Tjmax
RDS(ON).
ID
650
900
5
V
mΩ
A
Application
● Power factor correction（PFC）
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply（UPS）
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
PE60R900I
TO-251
PE60R900I
PE60R900K
TO-252
PE60R900K
Table 1. Absolute Maximum Ratings (TC=25℃)
Parameter
Drain-Source Voltage (VGS=0V）
Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
Pulsed drain current (Note 1)
Drain Source voltage slope, VDS = 480 V, ID = 5 A, Tj =
125 °C
Maximum Power Dissipation(Tc=25℃)
Derate above 25°C
Single pulse avalanche energy (Note2)
Avalanche current(Note 1)
Symbol
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
dv/dt
PD
EAS
IAR
WWW.SEMI-ONE.COM
Page 1
TO-251
TO-252
Value
600
±30
5
3
15
48
49
0.39
135
2.5
Unit
V
V
A
A
A
V/ns
W
W/°C
mJ
A
v1.0
