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PE60R900K Datasheet Preview

PE60R900K Datasheet

N-Channel MOSFET

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PE60R900I PE60R900K
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
New technology for high voltage device
Low on-resistance and low conduction losses
Small package
Ultra Low Gate Charge cause lower driving requirements
100% Avalanche Tested
ROHS compliant
VDS @Tjmax
RDS(ON).
ID
650
900
5
V
m
A
Application
Power factor correctionPFC
Switched mode power supplies(SMPS)
Uninterruptible Power SupplyUPS
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
PE60R900I
TO-251
PE60R900I
PE60R900K
TO-252
PE60R900K
Table 1. Absolute Maximum Ratings (TC=25)
Parameter
Drain-Source Voltage (VGS=0V
Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
Pulsed drain current (Note 1)
Drain Source voltage slope, VDS = 480 V, ID = 5 A, Tj =
125 °C
Maximum Power Dissipation(Tc=25)
Derate above 25°C
Single pulse avalanche energy (Note2)
Avalanche current(Note 1)
Symbol
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
dv/dt
PD
EAS
IAR
WWW.SEMI-ONE.COM
Page 1
TO-251
TO-252
Value
600
±30
5
3
15
48
49
0.39
135
2.5
Unit
V
V
A
A
A
V/ns
W
W/°C
mJ
A
v1.0




semi one

PE60R900K Datasheet Preview

PE60R900K Datasheet

N-Channel MOSFET

No Preview Available !

PE60R900I PE60R900K
Parameter
Repetitive Avalanche energy tAR limited by Tjmax
(Note 1)
Operating Junction and Storage Temperature Range
Symbol
EAR
TJ,TSTG
Value
0.4
-55...+150
Unit
mJ
°C
Table 2. Thermal Characteristic
Parameter
Thermal ResistanceJunction-to-CaseMaximum
Thermal ResistanceJunction-to-Ambient Maximum
Symbol
RthJC
RthJA
Value
2.55
75
Unit
°C /W
°C /W
Table 3. Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
On/off states
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25)
Zero Gate Voltage Drain Current(Tc=125)
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance
BVDSS
IDSS
IDSS
IGSS
VGS(th)
RDS(ON)
VGS=0V ID=250μA
VDS=600V,VGS=0V
VDS=600V,VGS=0V
VGS=±30V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=2.5A
Dynamic Characteristics
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Intrinsic gate resistance
gFS VDS = 20V, ID = 3A
Clss
Coss
Crss
VDS=50V,VGS=0V,
F=1.0MHz
Qg
Qgs
Qgd
VDS=480V,ID=5A,
VGS=10V
RG f = 1 MHz open drain
Switching times
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
td(on)
tr
td(off)
tf
VDD=380V,ID=3A,
RG=18,VGS=10V
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
Pulsed Source-drain current(Body Diode)
ISD
ISDM
TC=25°C
Forward on voltage
VSD Tj=25°C,ISD=5A,VGS=0V
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr Tj=25°C,IF=5A,di/dt=100A/μs
Peak reverse recovery current
Irrm
Notes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25,VDD=50V,VG=10V, RG=25
Min Typ
600
2.5 3
780
4.8
460
45
3.5
10
1.6
4
2.5
6
3
50
9
1
250
2.2
15
Max
1
50
±100
3.5
900
20
60
15
5
15
1.3
Unit
V
μA
μA
nA
V
m
S
pF
pF
pF
nC
nC
nC
nS
nS
nS
nS
A
A
V
nS
uC
A
WWW.SEMI-ONE.COM
Page 2
v1.0


Part Number PE60R900K
Description N-Channel MOSFET
Maker semi one
Total Page 7 Pages
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