* VDS =40V,ID =80A RDS(ON) <6.6mΩ @ VGS=10V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stab.

PE40N65 General Features
* VDS =40V,ID =80A RDS(ON) <6.6mΩ @ VGS=10V
* High density cell design for ultra low.

The PE40N65 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. PE40N65 General Features
* VDS =40V,ID =80A RDS(ON) <6.6mΩ @ VGS=10V
* High density .

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