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PE4013S - N-Channel Enhancement Mode Power MOSFET

Description

The PE4013S uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS >40V,ID =8A S Schematic diagram RDS(ON) < 12mΩ @ VGS=10V RDS(ON) < 15mΩ @ VGS=4.5V.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.

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Datasheet Details

Part number PE4013S
Manufacturer ChipSourceTek
File Size 1.47 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE4013S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel Enhancement Mode Power MOSFET PE4013S Description The PE4013S uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications. D G General Features ● VDS >40V,ID =8A S Schematic diagram RDS(ON) < 12mΩ @ VGS=10V RDS(ON) < 15mΩ @ VGS=4.
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