PE3407A mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS = -30V,ID = -4.3A RDS(ON) < 90mΩ @ VGS=-4.5V RDS(ON) <60mΩ @ VGS=-10V
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* High Power and current handing capability
* Lead free .
GENERAL FEATURES
* VDS = -30V,ID = -4.3A RDS(ON) < 90mΩ @ VGS=-4.5V RDS(ON) <60mΩ @ VGS=-10V
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The PE3407A uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
* VDS = -30V,ID = -4.3A RDS(ON) < 90mΩ @ VGS=-4.5V RDS(ON) <60mΩ @ VGS=-10V
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S.
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