PE3401F mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS = -16V,ID = -3A RDS(ON) < 85 m Ω @ VGS=-2.5V RDS(ON) < 65 m Ω @ VGS=-4.5V
PE3401F
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S Schematic diagram
* High Power and current handing capability
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GENERAL FEATURES
* VDS = -16V,ID = -3A RDS(ON) < 85 m Ω @ VGS=-2.5V RDS(ON) < 65 m Ω @ VGS=-4.5V
PE3401F
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S Sch.
The PE3401F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
* VDS = -16V,ID =.
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