PE3400A mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 30V,ID = 5.8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V RDS(ON) < 41mΩ @ VGS=10V
S Schematic diagram
* High Power and current handing capabili.
*Load switch
*Power management
SOT-23 top view
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parame.
The PE3400A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
D G
GENERAL FEATUR.
Image gallery
TAGS
Download (Size : 622.02KB)