PE2312 mosfet equivalent, dual p & n-channel enhancement mode power mosfet.
* P-Channel VDS = -20V,ID = -3A RDS(ON) = 110mΩ @ VGS=-2.5V RDS(ON) = 85 m Ω @ VGS=-4.5V
* N-Channel VDS = 20V,I D = 3A RDS(ON) = 65m Ω @ VGS=2.5V RDS(ON) = 50 m .
(6)D1
(1)G1
(3)G2
(4)D2
GENERAL FEATURES
* P-Channel VDS = -20V,ID = -3A RDS(ON) = 110mΩ @ VGS=-2.5V RDS(ON) =.
The PE2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
(6)D1
(1)G1
(3)G2
(4)D2
GENERAL FE.
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