PE2023 mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS = -20V,ID = -3.2A RDS(ON) = 68 m Ω @ VGS=-4.5V RDS(ON) = 95 m Ω @ VGS=-2.5V RDS(ON) = 140mΩ @ VGS=-1.8V
* High Power and current handing capability
* Le.
(6)D1
(4)D2
(1)G1
(3)G2
GENERAL FEATURES
* VDS = -20V,ID = -3.2A RDS(ON) = 68 m Ω @ VGS=-4.5V RDS(ON) = 95 m Ω.
The PE2023 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
(6)D1
(4)D2
(1)G1
(3)G2
GENERAL FE.
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