PE2012 mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 20V,ID =12A RDS(ON) < 13mΩ @ VGS=4.5V RDS(ON) < 15mΩ @ VGS=2.5V
* High power and current handing capability
* Lead free product is acquired
* Surf.
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General Features
* VDS = 20V,ID =12A RDS(ON) < 13mΩ @ VGS=4.5V RDS(ON) < 15mΩ @ VGS=2.5V
* High power and curr.
The PE2012 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .
General Features
* VDS = 20V,ID =1.
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