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PE01P30 Datasheet Preview

PE01P30 Datasheet

P-Channel Enhancement Mode Power MOSFET

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P-Channel Enhancement Mode Power MOSFET
Description
The PE01P30 uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. It can be
used in a wide variety of applications.
General Features
VDS =-100V,ID =-30A
RDS(ON) <58m@ VGS=-10V
(Typ:50m)
Super high dense cell design
Advanced trench process technology
Reliable and rugged
High density cell design for ultra low On-Resistance
Application
Portable equipment and battery powered systems
PE01P30
Schematic diagram
TO-220-3L top view
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-100
±20
-30
-21
-140
120
0.8
-55 To 175
Unit
V
V
A
A
A
W
W/
www.semi-one.com
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semi one

PE01P30 Datasheet Preview

PE01P30 Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

PE01P30
Thermal Characteristic
Thermal Resistance,Junction-to-Case (Note 2)
RθJc 1.25 /W
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=-250μA
VDS=-100V,VGS=0V
VGS=±20V,VDS=0V
-100
-
-
-
-
-
-
1
±100
V
μA
nA
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=-250μA
VGS=-10V, ID=-15A
VDS=-50V,ID=-10A
-1.5 -1.9
- 50
5-
-3
58
-
V
m
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
VDS=-25V,VGS=0V,
F=1.0MHz
- 2700
- 790
-
-
PF
PF
Crss
- 450
-
PF
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=-50V,ID=-15A
VGS=-10V,RGEN=9.1
VDS=-50V,ID=-15A,
VGS=-10V
- 17
- 80
- 45
- 65
- 90
- 15
- 35
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
VGS=0V,IS=-10A
- - -1.2 V
IS
-
- - -30
A
trr
TJ = 25°C, IF =-15A
- 90
-
nS
Qrr
di/dt = 100A/μs(Note3)
- 70
-
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=-50V,VG=-10V,L=0.5mH,Rg=25
www.semi-one.com
Page 2
v1


Part Number PE01P30
Description P-Channel Enhancement Mode Power MOSFET
Maker semi one
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