• Part: PE01P40K
  • Description: P-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: semi one
  • Size: 1.37 MB
Download PE01P40K Datasheet PDF
semi one
PE01P40K
Description The PE01P40K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features - VDS = -100V, ID = -40A RDS(ON) < 45mΩ @ VGS=-10V RDS(ON) < 55mΩ @ VGS=-4.5V - High Power and current handing capability - Lead free product is acquired - Surface Mount Package Application - PWM applications - Load switch - Power management Schematic diagram Marking and pin assignment TO-252-2L Absolute Maximum Ratings (TC=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous (TC=100℃) Pulsed Drain Current (Note 1) Maximum Power Dissipation Avalanche Energy (L=0.5m H) Operating Junction and Storage Temperature Range Symbol VDS VGS ID ID IDM PD EAS TJ,TSTG Thermal Characteristic Thermal Resistance, Junction-to-Case (Note 2) RθJC Rating -100 ±20 -40 -29 -120 108 400 -55 To 175 Unit V V A A A W m J ℃ ℃/W .semi-one. Page...