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PE01H18T - N-Channel Trench Power MOSFET

General Description

The PE01H18T is N-channel MOS Field Effect Transistor designed for high current switching applications.

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.

Key Features

  • VDS=100V; ID=118A@ VGS=10V; RDS(ON).

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Datasheet Details

Part number PE01H18T
Manufacturer semi one
File Size 623.71 KB
Description N-Channel Trench Power MOSFET
Datasheet download datasheet PE01H18T Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel Trench Power MOSFET General Description The PE01H18T is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features ● VDS=100V; ID=118A@ VGS=10V; RDS(ON)<7.5mΩ @ VGS=10V ● Special Designed for E-Bike Controller Application ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● 72V E-Bike controller applications ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply PE01H18T To-220 Top View Schematic Diagram VDS = 100V ID= 118A RDS(ON)= 6.2mΩ Package Marking and Ordering Information Device Marking Device Device Package PE01H18T PE01H18T TO-220 Reel Size - Table 1.