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PE01H18T - N-Channel Trench Power MOSFET

PE01H18T Description

N-Channel Trench Power MOSFET General .
The PE01H18T is N-channel MOS Field Effect Transistor designed for high current switching applications.

PE01H18T Features

* VDS=100V; ID=118A@ VGS=10V; RDS(ON)

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Datasheet Details

Part number
PE01H18T
Manufacturer
semi one
File Size
623.71 KB
Datasheet
PE01H18T-semione.pdf
Description
N-Channel Trench Power MOSFET

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N-Channel Trench Power MOSFET semi one
semi one PE01H18T-like datasheet