PE01H18T mosfet equivalent, n-channel trench power mosfet.
* VDS=100V; ID=118A@ VGS=10V; RDS(ON)<7.5mΩ @ VGS=10V
* Special Designed for E-Bike Controller Application
* Ultra Low On-Resistance
* High UIS and UIS 10.
Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applic.
The PE01H18T is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.
Features
* VDS=.
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