PE01P30
Description
The PE01P30 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =-100V,ID =-30A RDS(ON) <58mΩ @ VGS=-10V
(Typ:50mΩ)
- Super high dense cell design
- Advanced trench process technology
- Reliable and rugged
- High density cell design for ultra low On-Resistance
Application
- Portable equipment and battery powered systems
Schematic diagram
TO-220-3L top view
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current Maximum Power Dissipation
IDM PD
Derating factor
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-100 ±20 -30 -21 -140 120 0.8 -55 To 175
Unit
V V A A A W W/℃ ℃
.semi-one.
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