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PE0106R Datasheet Preview

PE0106R Datasheet

N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET
Description
The PE0106R uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS = 100V,ID = 6A
RDS(ON) < 140m@ VGS=10V (Typ:110m)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
PE0106R
D
G
S
Schematic diagram
SOT-223-3L view
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=100V,VGS=0V
Limit
100
±20
6
24
3
-55 To 150
Unit
V
V
A
A
W
41.7 /W
Min Typ Max Unit
100 110
--
-
1
V
μA
WWW.SEMI-ONE.COM
Page 1




semi one

PE0106R Datasheet Preview

PE0106R Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS
VGS=±20V,VDS=0V
PE0106R
- - ±100 nA
VDS=VGS,ID=250μA
VGS=10V, ID=5A
VDS=5V,ID=2.9A
VDS=25V,VGS=0V,
F=1.0MHz
1.2 1.8
- 110
-8
2.5
140
-
V
m
S
- 690
- 120
- 90
-
-
-
PF
PF
PF
VDD=30V,ID=2A,RL=15
VGS=10V,RG=2.5
VDS=30V,ID=3A,
VGS=10V
- 11
- 7.4
- 35
- 9.1
- 15.5
- 3.2
- 4.7
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
VGS=0V,IS=6A
- - 1.2
--
6
V
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to product
WWW.SEMI-ONE.COM
Page 2


Part Number PE0106R
Description N-Channel Enhancement Mode Power MOSFET
Maker semi one
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