• Part: PE0106R
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Manufacturer: semi one
  • Size: 820.14 KB
Download PE0106R Datasheet PDF
PE0106R page 2
Page 2
PE0106R page 3
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PE0106R Key Features

  • VDS = 100V,ID = 6A RDS(ON) < 140mΩ @ VGS=10V (Typ:110mΩ)
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Excellent package for good heat dissipation
  • Power switching application
  • Hard switched and high frequency circuits
  • Uninterruptible power supply