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PE0106R - N-Channel Enhancement Mode Power MOSFET

semi one

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Datasheet Details

Part number	PE0106R
Manufacturer	semi one
File Size	820.14 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE0106R-semione.pdf

PE0106R Product details

Description

The PE0106R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 100V,ID = 6A RDS(ON) < 140mΩ @ VGS=10V (Typ:110mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Excellent package for good heat dissipation.

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Published: Dec 3, 2018 |