PE0102A - N-Channel Enhancement Mode Power MOSFET

semi one

Description

The PE0102A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =100V,I D =2A RDS(ON) < 230mΩ @ VGS=10V （Typ：190mΩ） PE0102A D G S Schematic diagram.

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PE0102A n-channel enhancement mode power mosfet by semi one - Datasheet Preview

Datasheet Details

Part number	PE0102A
Manufacturer	semi one
File Size	928.34 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE0102A Datasheet

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Full PDF Text Transcription

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N-Channel Enhancement Mode Power MOSFET Description The PE0102A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

Published: Dec 3, 2018 |