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PE0102A Datasheet Preview

PE0102A Datasheet

N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET
Description
The PE0102A uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =100V,I D =2A
RDS(ON) < 230m@ VGS=10V Typ190m
PE0102A
D
G
S
Schematic diagram
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin Assignment
SOT-23 top view
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient(Note 2)
RθJA
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=100V,VGS=0V
Limit
100
±20
2.0
1.2
7.5
1.0
-55 To 150
Unit
V
V
A
A
A
W
62.5 /W
Min Typ Max Unit
100 -
-
V
- - 1 μA
www.semi-one.com
Page 1
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semi one

PE0102A Datasheet Preview

PE0102A Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS
VGS=±20V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=2.0A
VDS=10V,I D=2.0A
VDS=25V,VGS=0V,
F=1.0MHz
VDs=50V,ID=2.0A
VGS=10V,RGEN=3
VDS=50V,ID=2.0A,
VGS=10V
VGS=0V,IS=2.0A
PE0102A
- - ±100 nA
1.2 1.9
190
- 10
2.5
230
-
V
m
S
802 PF
80 PF
41 PF
- 16
- 330
- 39
- 111
- 15
-2
-4
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- - 1.4
--
2
V
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
www.semi-one.com
Page 2
v1


Part Number PE0102A
Description N-Channel Enhancement Mode Power MOSFET
Maker semi one
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PE0102A Datasheet PDF






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