logo

T2G6003028-FL Datasheet, qorvo

T2G6003028-FL transistor equivalent, gan rf power transistor.

T2G6003028-FL Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 2.44MB)

T2G6003028-FL Datasheet

Features and benefits


* Frequency: DC to 6 GHz
* Output Power (P3dB): 42.7 W at 3 GHz
* Linear Gain: >14 dB at 3 GHz
* Operating Voltage: 28 V
* Low thermal resistance pack.

Application


* Military radar
* Civilian radar
* Professional and military radio communications
* Test instrumentatio.

Description

The Qorvo T2G6003028-FL is a 30W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz. The device is constructed with Qorvo’s proven QGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high dr.

Image gallery

T2G6003028-FL Page 1 T2G6003028-FL Page 2 T2G6003028-FL Page 3

TAGS

T2G6003028-FL
GaN
Power
Transistor
qorvo

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts