T2G4003532-FS transistor equivalent, gan rf power transistor.
* Frequency: DC to 3.5 GHz
* Output Power (P3dB): 28 W at 3.5 GHz
* Linear Gain: >16 dB at 3.5 GHz
* Operating Voltage: 32 V
* Low thermal resistance .
* Military radar
* Civilian radar
* Professional and military radio communications
* Test instrumentatio.
The TriQuint T2G4003532-FS is a 30 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint’s proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency .
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