logo
HOME
MOSFET
Toshiba
Renesas
Sanyo Denki
RF Transistor

PE42512 pSemi

PE42512 RF Switch

PE42512 Avg. rating / M : star-11

datasheet Download

PE42512 Datasheet

Features and benefits


• High isolation: 39 dB @ 6 GHz
• Low insertion loss: 1.3 dB @ 6 GHz
• Fast switching time of 232 ns
• Power handling of 33 dBm CW
• Logic select (LS).

Application


• Test and measurement
• Wireless applications up to 8 GHz
• Filter bank switching
• RF signal routing .

Image gallery

PE42512 PE42512 PE42512

TAGS
PE42512
Switch
PE4251
PE42510A
PE4250
pSemi
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy