PE29101 driver equivalent, high-speed fet driver.
* High- and low-side FET drivers
* Dead-time control
* Fast propagation delay, 11 ns
* Internal gate overvoltage management
E
* Sub-nanosecond rise an.
IF
* DC
–DC conversions
* AC
–DC conversions
* Wireless power L
* LiDAR
F.
F The PE29101 integrated high-speed driver is designed to control the gates of external power devices, such as
enhancement mode gallium nitride (GaN) FETs. The outputs of the PE29101 are capable of providing switching transition speeds in the sub-nan.
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