* 100% avalanche tested at I(AS) = 190 A
* Optimized for low RDSon
* Low leakage < 1 µA at 25 °C
* Low spiking and ringing for low EMI designs
* Optim.

2. Features and benefits
* 100% avalanche tested at I(AS) = 190 A
* Optimized for low RDSon
* Low leakage .

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package optimized for low RDSon. Low IDSS leakage even when hot, high efficiency and high current rated to 300 A, optimized for DC load switch and hot-swap applications. 2. Features.

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