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PSMNR58-30YLH - N-channel MOSFET

Datasheet Summary

Description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56E package optimized for low RDSon.

Low IDSS leakage even when hot, high efficiency and high current rated to 380 A, optimized for DC load switch and hot-swap applications.

2.

Features

  • 100% avalanche tested at I(AS) = 190 A.
  • Optimized for low RDSon.
  • Low leakage < 1 µA at 25 °C.
  • Low spiking and ringing for low EMI designs.
  • Optimized for 4.5 V gate drive.
  • Copper-clip for low parasitic inductance and resistance.
  • High reliability LFPAK package, qualified to 175 °C.
  • Wave solderable; exposed leads for optimal solder coverage and visual solder inspection 3.

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Datasheet Details

Part number PSMNR58-30YLH
Manufacturer nexperia
File Size 291.68 KB
Description N-channel MOSFET
Datasheet download datasheet PSMNR58-30YLH Datasheet
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PSMNR58-30YLH N-channel 30 V, 0.67 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology 12 November 2019 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56E package optimized for low RDSon. Low IDSS leakage even when hot, high efficiency and high current rated to 380 A, optimized for DC load switch and hot-swap applications. 2. Features and benefits • 100% avalanche tested at I(AS) = 190 A • Optimized for low RDSon • Low leakage < 1 µA at 25 °C • Low spiking and ringing for low EMI designs • Optimized for 4.
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