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PSMN8R5-100ES - N-channel MOSFET

Description

Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C.

This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

Features

  • High efficiency due to low switching and conduction losses.
  • Suitable for standard level gate drive sources 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PSMN8R5-100ES N-channel 100 V 8.5 mΩ standard level MOSFET in I2PAK 11 October 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits • High efficiency due to low switching and conduction losses • Suitable for standard level gate drive sources 1.3 Applications • AC-to-DC power supply equipment • Motor control • Server power supplies • Synchronous rectification 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current Tj = 25 °C; VGS = 10 V; Fig.
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