Datasheet4U Logo Datasheet4U.com

PSMN8R0-30YL - N-channel MOSFET

Datasheet Summary

Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in industrial and communications applications.

Features

  • High efficiency due to low switching and conduction losses.
  • Suitable for logic level gate drive sources 1.3.

📥 Download Datasheet

Datasheet preview – PSMN8R0-30YL

Datasheet Details

Part number PSMN8R0-30YL
Manufacturer NXP Semiconductors
File Size 398.37 KB
Description N-channel MOSFET
Datasheet download datasheet PSMN8R0-30YL Datasheet
Additional preview pages of the PSMN8R0-30YL datasheet.

📁 Similar Datasheet

Other Datasheets by NXP Semiconductors

Full PDF Text Transcription

Click to expand full text
w w w . D a t a S h e e t . c o . k r LF PA K PSMN8R0-30YL N-channel 8.3 mΩ 30 V TrenchMOS logic level FET in LFPAK Rev. 2 — 16 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits „ High efficiency due to low switching and conduction losses „ Suitable for logic level gate drive sources 1.3 Applications „ Class-D amplifiers „ DC-to-DC converters „ Motor control „ Server power supplies 1.4 Quick reference data Table 1.
Published: |