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PSMN6R4-30MLD - N-channel MOSFET

General Description

Logic level gate drive N-channel enhancement mode MOSFET in an LFPAK33 package.

Key Features

  • Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies.
  • Superfast switching with soft-recovery; s-factor > 1.
  • Low spiking and ringing for low EMI designs.
  • Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C.
  • Optimised for 4.5 V gate drive.
  • Low parasitic inductance and resistance.
  • High reliability clip bonded and solder die attach Mini Power SO8 package;.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PSMN6R4-30MLD N-channel 30 V, 6.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 21 January 2019 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in an LFPAK33 package. The NextPowerS3 portfolio, utilising Nexperia’s unique “SchottkyPlus” technology, delivers high efficiency and the low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like body diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. 2.