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PSMN6R0-30YL
N-channel TrenchMOS logic level FET
Rev. 01 — 10 September 2008 Preliminary data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.
1.2 Features and benefits
High efficiency due to low switching and conduction losses Suitable for logic level gate drive sources
1.3 Applications
Class-D amplifiers DC-to-DC converters Motor control Server power supplies
1.4 Quick reference data
Table 1.
PSMN6R0-30YL Datasheet
